CZD13003 1.5a , 700v npn plastic encapsulated transistor elektronische bauelemente 18-jan-2013 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features power switching applications package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 700 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 9 v collector current - continuous i c 1.5 a collector power dissipation p c 1.25 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 700 - - v i c =1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 400 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 9 - - v i e =1ma, i c =0 collector cut C off current i cbo - - 1 ma v cb =700v, i e =0 collector cut C off current i ceo - - 0.5 ma v ce =400v, i b =0 emitter cut C off current i ebo - - 1 ma v eb =9v, i c =0 dc current gain h fe (1) 20 - 30 v ce =5v, i c =0.5a h fe (2) 5 - - v ce =5v, i c =1.5a collector to emitter saturation voltage v ce(sat) - - 1 v i c =1a, i b =250ma base to emitter saturation voltage v be(sat) - - 1.2 v i c =1a, i b =250ma base-emitter voltage v be - - 3 v i b =2a transition frequency f t 5 - - mhz v ce =10v, i c =100ma, f =1mhz fall time t f - - 0.5 s i c =1a, i b1 = -i b2 =0.2a,v cc =100v storage time t s - - 2.5 s to-252 a c d n o p g e f h k j m b ref. millimet er ref. millimeter min. max. min. max. a 6. 35 6.8 0 j 2.30 ref. b 4.95 5.50 k 0.64 1.14 c 2.15 2.40 m 0.50 0.95 d 0.43 0.9 n 1.3 1.8 e 6.4 7.5 o 0 0.15 f 2.40 3.0 p 0.58ref. g 5.40 6.2 5 h 0. 60 1.20
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